Temperature dependences of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth

Temperature dependences of threshold current and differential quantum efficiency of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasiquantum-wire laser were measured, and were compared with those of quantum-well-film lasers fabricated on the same wafer. It was found that nonradiative recombination rate was not enhanced in the quasiquantum-wire laser compared with that of the quantum-well-film laser.<
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