Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD

Fabrication, design, and operation of strained layer, InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (/spl sim/300 A/cm
²
) were obtained for uncoated devices operating cw at room temperature. A responsivity of 71 μA/mW was obtained for a device with a photodiode etched facet angle of 3/spl deg/ and a photodiode bias of 0 V.