A charge control and current-voltage model for inverted MODFET's

An analytical model is used to investigate properties of the two-dimensional electron gas (2DEG) confined in a GaAs/AlGaAs quantum well (QW) formed in a inverted modulation doped field effect transistor (MODFET). The position of the Fermi level and the average distance of the carriers in the well have been calculated as a function of the 2DEG concentration, n/sub s/. A charge control model is presented based on the self-consistent solution of Schrodinger and Poisson's equation. The results show a unique behavior of the average distance of the 2DEG which increases with n/sub s/, a property unique to these type of structures. The analysis is extended to model current-voltage characteristics.<
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