A 500 V monolithic power MOSFET switching 100 A at greater than 10 MHz

A family of power transistors consisting of monolithic n-channel power MOSFETs is described. The totally self-aligned Power MOS IV has been used to produce devices that can switch 100 A at >10 MHz while blocking 500 V. With this technology, much larger and more powerful MOSFETs are being produced such as the APT 107 die at 388*588 mil or 228000 mil/sup 2/, and the APT 108 die at 585*738 mil or 432000 mil/sup 2/. The characteristics of the APT 108 die are presented.<
>