Potential of SOI power MOSFETs as a switching device for megahertz DC/DC converters

Switching characteristics of a power MOSFET formed on a silicon-on-insulator (SOI) substrate are analyzed by device simulation including the external circuit. The SOI power MOSFET is shown to have shorter turn-on and turn-off times than the corresponding MOSFET. Experiments are carried out on a prototype SOI power MOSFET, and good agreement is obtained between the simulation and the experiment. The SOI power MOSFET is shown to be a promising switching device for DC/DC converters operating at several megahertz.<
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