A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon

In this paper we report new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon with greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time saving of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.<
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