A breakdown model for the bipolar transistor to be used with circuit simulators

A breakdown model for the output characteristics of the bipolar transistor (bjt) has been developed. The behavioral modeling capability of PSPICE, a popular SPICE program (with Emphasis on Integrated Circuits) was used to implement the macromodel. The model predicts bjt output characteristics under breakdown conditions. Experimental data was obtained to verify the macromodel. Good agreement exits between the measured and the simulated results.<
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