General drift-diffusion theory of the current density in Schottky diodes

A new general expression for the current in Schottky diodes due to drift-diffusion but neglecting tunneling is presented. A precise expression for the ideality factor is derived. The temperature dependence of important quantities in both the degenerate (heavy doping) and nondegenerate (Boltzmann) limit is examined. In the degenerate regime, the temperature independence of the saturation current is shown to complicate the extraction of the barrier height from the current-voltage characteristics.<
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