A physics-based current-dependent base resistance mode; for advanced bipolar transistors

A physics-based current-dependent base resistance model has been developed that includes physical mechanisms such as base-width modulation, base-conductivity modulation, phase pushout, and emitter current crowding. It describes the current-dependent characteristics of the base resistance for all injection levels. A two-dimensional device simulator, PISCES, is used to justify the underlying physics. The predictions of the model show good agreement with results of measurements and device simulations. The model has been implemented in SPICE.<
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