Dependence of electromigration noise on geometrical and structural characteristics in aluminum-based resistors

Low frequency noise measurements have been performed on Al-Si resistors, subjected to high current density (j=2/spl times/10/sup 6/ A/cm/sup 2/), in order to investigate the dependence of the electromigration noise on the structural and geometrical parameters. To this end five groups of samples have been used, each characterized by a different value of the average grain size D. The power spectral density S/sub v/ of the voltage fluctuations across the samples has been measured using test patterns with different widths /spl omega/ and lengths l. It has been found that S/sub v/ shows an exponential dependence on the grain dimension and a linear dependence on the shape factor F=l//spl omega/. The model previously proposed for noise generation has been integrated to take into account the observed dependence of S/sub v/ on D and F.<
>