The low-frequency noise overshoot in partially depleted n-channel silicon-on-insulator twin-MOST's

This paper investigates the effect of the so-called twin-MOST structure on the kink-related low-frequency (LF) noise overshoot, which is observed in partially depleted (PD) SOI nMOST's. It is demonstrated that a significant reduction of the noise overshoot amplitude may be achieved in such a configuration, compared with a single transistor having the same effective gate length. The observed reduction is stronger than the one predicted on purely geometrical grounds, indicating that the floating body effects are indeed successfully reduced by this structure.<
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