Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs

This paper proposes a new systematic approach to the noise-figure (NF) sensitivity analysis of MMIC low-noise amplifiers (LNA) regarding device structure parameters such as gate-recess variation for the first time. A full-monolithic uniplanar two-stage LNA with an extremely low NF of 2.8 dB at 50 GHz is fabricated and analyzed using this new method. A comparative study reveals that the gate recess variation in the fabricated HEMTs causes no substantial NF variation in the MMIC-LNAs.<
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