35-GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE

We have fabricated 35-GHz balanced low-noise amplifiers using pseudomorphic InGaAs-GaAs HEMT material monolithically integrated with HBT material grown by selective MBE. The 0.2-μm T-gate HEMT amplifiers fabricated using a merged HEMT-HBT process have equivalent gain and noise figure compared to amplifiers fabricated using normal MBE and our baseline HEMT-only process. This demonstration of high performance HEMT amplifiers using integrated HEMT-HBT material and a merged HEMT-HBT process enables the fabrication of a new class of multifunction monolithic microwave integrated circuits.