A novel 3 volts-only, small sector erase, high density flash E/sup 2/PROM

A split gate Flash E/sup 2/PROM memory cell with Fowler-Nordhiem tunneling erase, and high efficiency hot electron programming is presented. Gate current measurements show that one out of every 300 channel electrons is injected into the gate under worst case programming conditions. The greater efficiency of cell allows the use of small on-chip multipliers for single 3v Vcc operation. High cell reliability is achieved through low floating gate oxide field (oxide reliability) and small programming current (contact reliability). It is shown that the cell is immune to read and write disturb conditions.<
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