A new type of Schottky tunnel transistor

A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I/sub k/ vs. cathode voltage V/sub k/ curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.<
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