A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources

GaInP/GaAs heterojunction bipolar transistors (HBT's) have been fabricated on epitaxial layers grown by chemical beam epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V sources. DC results showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum DC current of 50 was obtained. A comparison of these results with HBT characteristics obtained using AsH/sub 3//PH/sub 3/ or TBA/PH/sub 3/ demonstrates the feasibility of replacing the toxic AsH/sub 3/ and PH/sub 3/ by less toxic TBA and TBP sources in the growth of GaInP/GaAs HBT's.<
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