Operation and properties of a p-n avalanche photodiode in a charge integrating mode

An experimental study of charge storage operation in a Si p-n avalanche photodiode (APD) is discussed. It is shown that when the APD is pulsed beyond the breakdown voltage, avalanche multiplication gains of more than 10/sup 5/ are possible and the count rate of photoinduced output events is proportional to the input light intensity at ultralow-light levels. Moreover, in the below-breakdown mode, the amount of output signal charge is proportional to the input light intensity, while the gains are restricted to several tens and below. The slope of photoelectric conversion curves approaches gamma equivalent to 0.5, as a result of self-quenching of the avalanche discharge.<
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