Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator

Current-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator (SOI) structures are discussed, which indicate that the dominant transport mechanism is space-charge-limited current (SCLC) conduction in the presence of deep-level states. The deep-level parameters, determined using a simple analysis, appear to be sensitive to anneal conditions used and subsequent processing. Silicon implanted with 1.7*10/sup 18/ cm/sup -2/ oxygen ions at 150 keV following a 1200 degrees C anneal for 3 h shows deep level 0.37 eV below the conduction band edge with a concentration of unoccupied traps of approximately 2*10/sup 15/ cm/sup -3/. In contrast, arsenic ion implantation, in the 1200 degrees C annealed material with a dose of 1.5*10/sup 12/ cm/sup -2/ at 60 keV and activated by rapid thermal annealing (RTA), introduces a deep level 0.25 eV below the conduction band edge with an unoccupied trap concentration of approximately 6*10/sup 17/ cm/sup -2/.<
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