Fabrication of p-i-n photodiodes on LPE-grown substrates

Epitaxial growth of a thick heavily doped silicon layer on a highly resistive silicon wafer by the yo-yo solute feeding method and its application to p-i-n photodiodes are discussed. An abrupt transition of the impurity profile is obtained between the n/sup +/ layer (1.95*10/sup 19/ cm/sup -3/, 450 mu m) and the n/sup -/ layer (7.0*10/sup 11/ cm/sup -3/, 80 mu m). It is possible to use the thick intrinsic layers as the active region of power devices.<
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