An 8K/spl times/8 SRAM designed for high transient radiation tolerance

This paper describes important aspects in the design and testing of the GEC Plessey Semiconductors MA9564 CMOS-SOS 8K/spl times/8 SRAM. This device was specifically designed for continuous reliable operation under high dose rate transient irradiation conditions. The device was shown to be tolerant to prompt doses in excess of 1e12 rad(Si)/sec in passive mode using the ASTERIX simulator at DGA Gramat, France. Preliminary results using an electron beam simulator indicated an upset level in excess of 8e11 rad(Si)/sec in active mode.<
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