A circuit simulation model for bipolar-induced breakdown in MOSFET

The successful modeling of short-channel transistor breakdown characteristics with effective channel length down to 0.6 mu m is reported. The sudden increase in the MOS drain current due to threshold voltage reduction caused by the forward biasing of the source-substrate junction is also modeled with considerable accuracy. This is the first successful application of a short-channel breakdown model in a circuit simulator. Model parameter extraction and installation of the model in the circuit simulator is also discussed.<
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