Carrier recombination influence on the SOIMOSFET floating body effect

The carrier recombination influence on the floating body effect for fully depleted n-channel SOIMOSFET was analyzed by device simulation. It was found that the hole diffusion to the source electrode is negligibly small and that the surface recombination for the generated hole dominates the hole extinction, at the subthreshold region. Based on the simulated result, an analytical model on the hole concentration is proposed, in which the recombination velocity is explicitly included. The model explains the hole concentration behavior that is responsible for the floating body effect for the fully depleted SOIMOSFET.<
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