Forward-bias conduction of Schottky diodes on polysilicon thin films

An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data.<
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