The low-temperature anodization of silicon in a gaseous plasma

A comprehensive investigation of the low-temperature anodization of silicon in RF and microwave oxygen plasmas is discussed. A comparison of the growth results and ion signals observed, using quadropole mass spectrometry, indicates a strong correlation between the growth rate and the presence of O/sup -/ ions in the plasma. Characterization of parameters such as pressure, electrode spacing, and current density has allowed wafers up to 4-in. diameter to be anodized with good growth rates (0.3 mu m/h) and excellent oxide uniformity, using low temperatures (or=600 degrees C) processing.<>