High speed monolithically integrated pin-MODFET transimpedance photoreceivers

The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<
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