DAAS technique for synthesizing doped PZT and PLZT thin films

The deposition by aqueous acetate solution (DAAS) technique has been developed for the preparation of 5% Fe-doped Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/ (PZT) and (Pb/sub 0.93/La/sub 0.07/)(Zr/sub 0.65/Ti/sub 0.35/)/sub 0.983/O /sub 3/ (PLZT) thin films on Pt[111]/Ti/SiO/sub 2//Si substrates. PZT films, crystallized at 600 degrees C for 10 min, display good electrical properties and fatigue characteristics. Iron doping suppressed the crystallization of the films as measured by X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) spectroscopy. When 5% of the zirconium and titanium were replaced by iron in the stoichiometric precursor solution, the film crystallized predominantly in the [110] orientation. When 5% excess iron was added to the precursor solution, the film crystallized in the [100] orientation. The electronic states and charge species responsible for photoconductivity were investigated by emission/excitation and photocurrent action spectroscopy. The low photoemission at 77 K and high photoconductivity at 298 K in the doped thin films, as compared with thermally iron-doped ceramics, are attributed to surface energy quenching and low trapping state density.<
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