A DC and small signal model for high electron mobility transistors

A new model is presented for high electron mobility transistors (HEMTs). It is based on a single analytical function that describes the electron concentrations in the two-dimensional electron gas and in the AlGaAs layer. The model results in closed-form expressions for the current, transconductance and output conductance. The theoretical predictions of the model are compared with experimental data and shown to be in good agreement over a wide range of bias conditions.<
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