Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p/sup +/-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900/spl deg/C. As a result, the junction depth of the BF/sub 2/-implanted device is much larger than that of the boron-implanted device.<
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