Reliability of InGaAs/InP photodiodes passivated with polyimide

The results of reliability studies of InGaAs/InP PIN covered-mesa photodiode passivated with polyimide are presented. The photodiode consists of two epitaxial layers of n/sup -/ InP and n/sup -/InGaAs grown by liquid phase epitaxy on n/sup +/ InP substrate. The anode of the photodiode was obtained by Zn diffusion and the passivation of the junction with polyimide. All the devices were bonded with AuSn on ceramic chip carriers. Accelerated life-tests were carried out at 100 degrees C, 130 degrees C and 150 degrees C at -5 V. From the random failure rates, the activation energy of the degradation process in the dark current was estimated to be 0.77 eV and the room temperature average life time was estimated to be 1*10/sup 8/ h. Stable operation of the dark current during more than 10000 h at 150 degrees C, -5 V was observed.<
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