Schottky merged BiCMOS structures

A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the same reduced area advantage of merged over conventional BiCMOS, and is shown to have granted latchup immunity to BiCMOS circuits. The device simulations using HSPICE verify the latchup immunity.<
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