Comments on numerical large-signal simulation of the diffusion noise in GaAs Gunn devices" [with reply]

It is pointed out that a rigorous large-signal noise analysis of electron devices is possible, but is far more complex than the theory exploited in a previous paper by W. Wang and M.Curow (IEEE Trans. Electron Devices, vol ED-39, no.9, p.2176-8, 1992). Moreover, the impedance field used is only an approximation holding in a reciprocal medium, It is suggested that the original authors should at least discuss the validity of those approximations in the case considered. In their reply, Wang and Curow argue that the commenter misunderstood the intention and contents of their paper, since they do not claim that their simulation is a rigorous approach.<
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