Gate-induced drain leakage current in MOS devices

The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental data. The results show that in silicon MOSFETs the GIDL is dominated by tunneling from the conduction band to the interface traps, and the contribution from both direct and indirect band-to-band tunneling is negligible.<
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