A technique for profiling the epilayer channel of surface acoustic wave devices on piezoelectric semiconductors

A method for determining the impurity doping profile of the transport epitaxial layer channel of surface acoustic wave (SAW) devices on piezoelectric semiconductors is presented. This technique utilizes the same structure already present in these devices; thus, testing can be done without altering or damaging the device. Another advantage of this technique over the equivalent C-V measurement is the high sensitivity of the transverse acoustoelectric voltage (TAV) to higher resistivity materials. Experiments and estimated doping profiles are presented along with the theoretical analysis of the measurement.<
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