A novel approach to controlled programming of tunnel-based floating-gate MOSFETs

This paper presents a new approach to obtain automatic and accurate control of the threshold voltage of floating-gate MOSFETs programmable by means of tunneling current. The proposed method avoids using a series of partial write/erase operations followed by measurements and adjustment steps, thus achieving a significant advantage in terms of programming time for the same accuracy. The simplicity of the proposed method and its inherent speed make it ideal in a wide range of possible applications.<
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