Deep submicrometer super self-aligned Si bipolar technology with 25.4 ps ECL

A new deep submicron double-poly self-aligned Si bipolar technology has been developed using a 0.3-/spl mu/m design rule, a collector polysilicon trench electrode, and oxide-filled trench isolation. This technology is called "High-Performance Super Self-Aligned Process Technology" or HSST. 0.3-/spl mu/m minimum patterning is achieved by electron-beam direct writing technology. The HSST bipolar transistor is 2.5 times smaller than the previous 1-/spl mu/m SST-1B. Owing to its horizontal reduction and an f/sub T/ of 22.3 GHz at V/sub ce/=1 V, the ECL gate attains 25.4 ps/G at 1.58 mA, which is a 30% improvement on the SST-1B. By including parasitic capacitances of the base polyelectrode and polyresistors, the ECL delay time is accurately simulated for low-power operation. It is shown that the HSST is a very promising technology for the development of future high-speed communication systems.<
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