Signal simulations for double-sided silicon strip detectors

Signals resulting from the passage of minimum ionizing charged particles through double sided Si strip detectors detectors are simulated, including the effects of Landau fluctuations and the drift of electrons and holes in the electric and magnetic fields inside the detector. Induced currents are integrated, shaped and discriminated after addition of random electrical noise, and the timing of signals is obtained. Using the results of many Monte Carlo generated events, efficiencies, position resolutions, and means are evaluated as functions of the threshold, signal-to-noise ratio, amplifier shaping time, and data storage time-window.<
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