Ferroelectric memories: a possible answer to the hardened nonvolatile question

Ferroelectric memory cells were fabricated using a process compatible with semiconductor VLSI manufacturing techniques that are basically nonvolatile and radiation-hard. The memory can be made NDRO (nondestructive readout) for strategic systems using several techniques, the most practical being a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power, and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems.<
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