A 200-V flat-panel display IC with a novel diffused-well structure

A high-voltage diffused-well structure that allows the low-coast fabrication of a monolithic high-voltage CMOS IC without using any epitaxial layers is discussed. Offset-gate-type PMOSTs for the proposed structure were fabricated within an n-well and a breakdown voltage over 200 V was obtained. A high-performance 200-V CMOS test IC for which high-voltage NMOSTs and low-voltage CMOS peripheral circuits were built in the p-type substrate area was fabricated. Superior latchup immunity was obtained with this structure. A 2200-pF capacitance load corresponding to that of an electroluminescent display panel was successfully driven.<
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