An improved model for SCR and TRIAC

The authors present a SCR (silicon-controlled rectifier) model with an intrinsic three-junction configuration. The conductivity modulation in the high-current region and the SNS (Sah-Noyce-Shockley) recombination in the low-current region are both considered, and the on-state DC I-V curve is calibrated numerically with respect to the data specification sheet. This model has advantages of both flexibility and accuracy over existing models, while still preserving the simplicity. The model can be easily extended for triac modeling.<
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