QML qualified 256 K radiation-hardened CMOS SRAM

The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds all program requirements, while continuing to meet performance requirements. The 256 K RH SRAM has received QML qualifications is in full production, and has been delivered for use in space applications.<
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