Advances in CPW-design applied to monolithic integrated Ka-band MESFET and HEMT-amplifiers on GaAs

Two Ka-band amplifiers in coplanar waveguide (CPW) technology are presented. The four-stage design is based on 0.3- mu m MESFETs, whereas in the three-stage amplifier 0.25- mu m high-electron-mobility transistors (HEMTs) are used. The monolithic microwave integrated circuits (MMICs) are designed for a gain of 20 dB. The authors present the realized MMICs and in particular the way in which typical difficulties arising from transforming theoretical demands into a coplanar circuit layout can be overcome. The applicability and accuracy of the developed design procedures are demonstrated by comparison of simulated and measured results.<
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