Large-signal HBT characterization and modeling at millimeter wave frequencies

A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.<
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