OMCVD growth of strained Al/sub x/Ga/sub y/In/sub 1-x-y/As for low threshold 1.3 mu m and 1.55 mu m quantum well lasers

It is shown that low threshold current density compressive and tensile strained lasers with AlGaInAs QWs (quantum wells) can be fabricated with easily controllable QW thicknesses in the range of 7-15 nm. It is also shown that it is possible to adjust the emission wavelength from 1.32 to 1.62 mu m while maintaining the QW thickness and strain. The presence of Al in the QWs does not degrade the laser performance, with a threshold current density as low as 96 A/cm/sup 2/ being obtained for compressively strained 1.32- mu m lasers. Tensile strained 1.36- mu m lasers with a threshold current density as low as 256 A/cm/sup 2/ were achieved for the first time.<
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