High quality InGaAs/InP and InAlAs/InP heterostructures beyond the Matthews-Blakeslee critical layer thickness

Mismatched epitaxial layers of InGaAs and InAlAs were grown on InP by molecular beam epitaxy. Double-crystal X-ray diffraction measurements show that the crystalline quality of the layers consistently remains unperturbed to thicknesses up to 3-8 times the Matthews-Blakeslee critical layer thickness. The findings are applied to the growth of high-performance mismatched InAlAs/InGaAs/InP heterostructure field-effect transistors.<
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