Analysis of SiO/sub 2//InP interfaces using gated photoluminescence and Raman spectroscopy

Photoluminescence (PL) and Raman spectroscopy were used to analyze the SiO/sub 2//InP interface. From PL measurements on gated MIS structures, interface state densities as low as 10/sup 1O//cm/sup 2/-eV have been calculated. This method is more sensitive than conventional high-frequency CV analysis and is less dependent on leakage currents than the quasi-static method.<
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