Fabrication and characterization of HTS/semiconductor three terminal device

The authors present preliminary experimental results of a high-T/sub c/ superconductor/semiconductor three-terminal device with a SUBSIT (superconducting base, semiconducting isolated transistor) structure, where Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ (BSCCO) and Te are used as superconducting base and semiconducting collector, respectively. The device with a Au/Te/BSCCO/BSCO/BSCCO structure is fabricated on a MgO