Numerical modeling of gate turn-off thyristor using SICOS

A numerical model of gate turn-off thyristors (GTOs) is presented. The concept of a controlled switch realized by a controlled current source is first introduced. Using this basic model, an equivalent circuit for the GTO is given. Using the GTO characteristics given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced, and all of the parameters are determined. A sample study is presented. Simulation of this numerical model with the SICOS program gave results in accordance with the experiment.<
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