Low-temperature fabrication of amorphous BaTiO/sub 3/ thin-film bypass capacitors

Amorphous BaTiO/sub 3/ thin-film capacitors suitable for integration into a multichip module packaging process were fabricated. The multilayer capacitor structure consisted of an adhesion layer (TiO/sub x/N/sub y/ or Ti), a bottom electrode (Cu), a dielectric (amorphous BaTiO/sub 3/), and a top electrode (Cu). A 3000-AA amorphous BaTiO/sub 3/ film was deposited onto the electrode by the reactive partially ionized beam (RPIB) technique at near room temperature. After a 300 degrees C postdeposition anneal, the capacitors had the following properties: epsilon /sub r/=17-18 and tan delta <0.01 up to 600 MHz, J/sub leak/=0.06-0.5 mu A/cm/sup 2/ at 0.5 MV/cm, and breakdown field E/sub max/=3.3 MV/cm.<
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