A simple two-dimensional model for subthreshold channel-length modulation in short-channel MOSFETs

A physical yet simple model that describes subthreshold channel-length modulation and its complex relationship with drain-induced barrier lowering (DIB) in short-channel MOSFETs is derived. The underlying quasi-two-dimensional analysis produced a V/sub DS/-independent value for the modulated channel length in weak inversion, which can be used to simplify and correct subthreshold current simulation. The model, supported by numerical device simulation, further gives insight regarding how channel-length modulation scales with structural parameters.<
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