Geometric factor for Hall mobility characterization using the van der Pauw dual configuration

A geometric factor applicable to a wide range of device geometries of the van der Pauw dual configuration is presented. Such a configuration allows a direct retrieval of the Hall mobility in a single measurement of the magnetic-field-induced imbalance in output current. In view of scaling considerations, the geometric factor is characterized simply in terms of device aspect ratio (L/W) and relative electrode separation (d/W). The geometric factor, which is based on numerical computations, overcomes the limitations inherent in the existing form that has been analytically obtained for an infinitesimally small electrode separation. Hence, it is now possible to design practical device geometries which readily lend themselves to in situ measurement and characterization of the material or process in question, without being constrained by photolithography limitations.<
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